A Radio Frequency CMOS Band Pass Amplifier Using High-Q Active Inductor Loads with Binary Code for Multi-Band Selecting
نویسنده
چکیده
In this paper, a CMOS radio frequency (RF) multi-band band-pass amplifier using a high-Q active inductor load with a binary code band selector suitable for multi-standards wireless applications is proposed. By employing the improved high-Q active inductor including two bits binary controlled code, the RF multi-band amplifier operating at four different frequency bands is realized. The proposed amplifier circuit is designed in TSMC 0.18-um CMOS technology. Based on the simulation results, the amplifier can operate at 900MHz, 1.8GHz, 2.4GHz, and 3.6GHz with forward gain (S21) of 21.9 dB, 21.9dB, 21.8dB, and 12.5 dB, respectively. Furthermore, the power dissipation of this amplifier can retain constant at all operating frequency bands and consume around 5.27 mW from 1.8-V power supply. Key-Words: CMOS, High-Q Active Inductor, Bands Selector, Multi-Band Amplifier, and Multi-Standards.
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